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FDS6986S
September 2002
FDS6986S
Dual Notebook Power Supply N-Channel PowerTrench SyncFETTM
General Description
The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
* Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 20 m @ VGS = 10V RDS(on) = 28 m @ VGS = 4.5V * Q1: Optimized for low switching losses Low gate charge (6.5 nC typical) RDS(on) = 29 m @ VGS = 10V RDS(on) = 38 m @ VGS = 4.5V
7.9A, 30V
6.5A, 30V
1 /S D2 1 /S D2
D
D
D
5 6 7
Q2
4 3
D1
D
D1
Q1
2 1
SO-8
G S1
Pin 1 SO-8
S
S
S
G S2 1 2 /D
G
8
2
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage
TA = 25C unless otherwise noted
Parameter
Q2
30
(Note 1a)
Q1
30 16 6.5 20 2 1.6 1 0.9 -55 to +150
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
Drain Current
20 7.9 30
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W C/W
Package Marking and Ordering Information
Device Marking FDS6986S
2002 Fairchild Semiconductor Corporation
Device FDS6986S
Reel Size 13"
Tape width 12mm
Quantity 2500 units
FDS6986S Rev C1(W)
FDS6986S
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward
Test Conditions
VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 uA ID = 1 mA, Referenced to 25C ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V
Type Min Typ Max Units
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 30 20 23 500 1 100 -100 V mV/C A NA nA
Off Characteristics
VGS = 20 V, VDS = 0 V VGS = 16 V, VDS = 0 V Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V VGS = -16 V, VDS = 0 V
(Note 2)
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A ID = 1 mA, Referenced to 25C ID = 250 uA, Referenced to 25C VGS = 10 V, ID = 7.9 A VGS = 10 V, ID = 7.9 A, TJ = 125C VGS = 4.5 V, ID = 7 A VGS = 10 V, ID = 6.5 A VGS = 10 V, ID = 6.5 A, TJ = 125C VGS = 4.5 V, ID = 5.6 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 7.9 A VDS = 5 V, ID = 6.5 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz
1 1
2.4 1.6 -6 -4 16 24 23 25 37 30
3 3
V mV/C
Q1
20 32 28 29 49 38
m
ID(on) gFS
On-State Drain Current Forward Transconductance
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
30 20 23 22 1233 695 344 117 106 58 1.4 1.7
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15mV, f = 1.0 MHz pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6
Q2: VDS = 15 V, ID = 7.9 A, VGS = 5 V Q1: VDS = 15 V, ID = 6.5 A, VGS = 5 V
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
8 7 5 4.5 25 20 11 2.5 11 6.5 5 2.5 4 1.3
16 14 10 9 40 36 20 5 16 9
ns ns ns ns nC nC nC
FDS6986S Rev C1 (W)
Electrical Characteristics
Symbol
IS tRR QRR VSD
(continued)
TA = 25C unless otherwise noted
Parameter
Test Conditions
Type Min
Q2 Q1 Q2 Q2 Q1
Typ
Max Units
3.0 1.3 A ns nC 0.7 1.2 V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge IF = 10 A, diF/dt = 300 A/s 17 12.5 0.5 0.74
(Note 3) (Note 2) (Note 2)
Drain-Source Diode Forward VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 1.3 A Voltage
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78C/W when mounted on a 0.5in2 pad of 2 oz copper
b)
125C/W when mounted on a 2 0.02 in pad of 2 oz copper
c)
135C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below.
FDS6986S Rev C1 (W)
FDS6986S
Typical Characteristics: Q2
50 VGS = 10V 40 6.0V 5.0V 4.5V
2.6 VGS = 4.0V 2.2
30 4.0V 20
1.8
4.5V 5.0V
1.4 6.0V 8.0V
10
1 3.5V 0.6 0 1 2 3 0 10 20 30
10V
0
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.06
1.9
ID = 10A VGS = 10V
ID = 5A 0.05 0.04
1.6
1.3 0.03 1 0.02 0.7 0.01 0.4 -50 -25 0 25 50 75 100
o o
TA = 125 C
o
TA = 25 C
0 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
50 VDS = 5V 40 125 C 30
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 VGS = 0V
TA = -55 C
o
25 C 1 TA = 125 C 25 C 0.1 -55 C
o o o
o
20 0.01 10 0.001 1.5 2.5 3.5 4.5 5.5 0 0.2 0.4 0.6 0.8
0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6986S Rev C1 (W)
FDS6986S
Typical Characteristics: Q2
10 ID =10A 8 VDS = 5V 15V 10V
2000 f = 1MHz VGS = 0 V 1600 CISS
6
1200
4
800 COSS CRSS
2
400
0 0 3 6 9 12 15 18 21
0 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT 100s 10 1ms 10ms 100ms 1s 1 DC 0.1 VGS = 10V SINGLE PULSE RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 0
o o
Figure 8. Capacitance Characteristics.
50 SINGLE PULSE RJA = 135C/W TA = 25C
40
30
10s 20
10
0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
FDS6986S Rev C1 (W)
FDS6986S
Typical Characteristics Q1
20 4.5V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 6.0V 15
2.25 2 VGS = 3.0V 1.75 1.5 1.25 1 0.75 0 0.5 1 1.5 2 2.5 3 0 5 10 ID, DRAIN CURRENT (A) 15 20
10
3.5V 4.5V 6.0V 10V
5 2.5V
0 VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.
0.075 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = 6.5A VGS = 10V
ID = 3.3 A 0.065
0.055 TA = 125oC 0.045 0.035 TA = 25oC 0.025
125
150
0.015 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
TJ, JUNCTION TEMPERATURE ( C)
Figure 13. On-Resistance Variation with Temperature.
20 VDS = 5V ID, DRAIN CURRENT (A) 16 125oC 12 25 C
o
Figure 14. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
TA = -55oC
VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC
8
4
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6986S Rev C1 (W)
FDS6986S
Typical Characteristics Q1
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.5A 8 CAPACITANCE (pF) 15V 6 VDS = 5V 10V
1000 f = 1MHz VGS = 0 V 800 CISS 600
4
400
2
200 CRSS COSS
0 0 3 6 Qg, GATE CHARGE (nC) 9 12
0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) 100s ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 100ms 1 VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25oC 0.01 0.01 1s 10s DC 0.1 1ms 10ms 50
Figure 18. Capacitance Characteristics.
40
SINGLE PULSE RJA = 135C/W TA = 25C
30
20
10
0.1
1
10
100
0 0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05
RJA(t) = r(t) + RJA RJA = 135 C/W P(pk)
0.02 0.01
t1 t2
SINGLE PULSE
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6986S Rev C1 (W)
FDS6986S
Typical Characteristics (continued)
This section copied from FDS6984S datasheet
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6986S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A)
0.1 125oC 0.01
0.001
3A/DIV
0.0001
25 C
o
0.00001 0 10 20 30
VDS, REVERSE VOLTAGE (V)
10nS/DIV
Figure 24. SyncFET body diode reverse leakage versus drain-source voltage and temperature.
Figure 22. FDS6986S SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690A).
3A/DIV
0V
10nS/DIV
Figure 23. Non-SyncFET (FDS6690A) body diode reverse recovery characteristic.
FDS6986S Rev C1 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1

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